Exposing mask and production method therefor and exposing method

ABSTRACT

An exposure mask forms a three-dimensional shape in simple structure and obtainable sufficient number of gray scales by exposure. In an exposure mask (M) for use in an exposure apparatus (S), the present invention is provided such that a plurality of pattern blocks constituted by a pair of a light blocking pattern blocking light emitted from the exposure apparatus (S) and a transmissive pattern transmitting the light are continuously arranged while a pitch of the continuous pattern blocks is constant and a ratio of the light blocking pattern to the transmissive pattern is varied gradually.

TECHNICAL FIELD

The present invention relates to an exposure mask for forming athree-dimensional shape such as an optical lens array by means ofexposure, and a fabrication method for the exposure mask.

BACKGROUND ART

As one of fabrication methods for micro optical parts such as microlensarrays for use in applied products of imaging devices such as CCDs,(Charge Coupled Devices) and LCDs (Liquid Crystal Displays), there is amethod which uses photolithography techniques employed in thefabrication of semiconductors and liquid crystal devices.

Namely, this method three-dimensionally processes a photoresist bygiving the desired exposure amount distribution to the photoresist whichis a photosensitive material, and three-dimensionally processes asilicon or glass substrate or the like by etching using the photoresistas a mask.

A first example of a photomask used in this lithography process isrealized by multiple exposure using a plurality of masks as shown inFIG. 29. An exposure method using this technique will be described on aone-dimensional basis with reference to FIG. 29. A final exposuredistribution is assumed to be D(X) in FIG. 29.

First, an exposure amount E[1] is given to a region <1> through a mask(1) in FIG. 29. Then, an exposure amount E[2] is given to a region <2>through a mask (2). At this time, a total exposure D1 of the region <1>becomes E[1]+E[2]. Further, a mask (3), a mask (4), . . . , mask (n),which are not shown, are respectively sequentially exposed with exposureamounts E[3], E[4], . . . , E[n], whereby a final exposure amount D[i]of a region i becomes D[i]=E[i]+E[i+1]+ . . . +E[n] and the desireddiscrete exposure amount distribution is obtained. In this case, thenumber of masks “n” corresponds to the position resolution of theexposure amount, and for example, if n=10, 10 gray scale exposure amountsteps are obtained.

As a second example other than the multiple exposure using a pluralityof masks, a method has recently been developed which obtains the desiredexposure amount distribution through one exposure by using a so-calledtransmissive type of gray-tone mask which is a mask called High EnergyBeam Sensitive (HEBS) glass having a mask substrate whose transmittanceis given a continuous distribution as described in Japanese PatentApplication Publication No. 2002-189280and the specification of U.S.Pat. No. 4,567,104. A conceptual diagram is shown in FIG. 30.

As a third example, the specifications of U.S. Pat. Nos. 3,373,518,5,310,623 and 6,335,151, which will be mentioned later, have proposedthe use of a mask which is formed of binary patterns so that its patternsizes are controlled to control light intensity on an exposure surface.

From among the above-mentioned methods, because the technique of thefirst example using multiple exposure with a plurality of masks is aplurality of multiple exposures and temporally needs multiple-stepexposure, a staircase-like shape remains in any obtainable cumulativeexposure amount distribution. In addition, the obtainable number ofexposure gray scales is the number of mask, i.e., the number of times ofexposure, and actually corresponds to approximately 10 steps whichresult in the problem that a sufficient number of gray scales are notobtainable. In addition, mask cost proportional to the complexity of theexposure process and the number of masks occurs, resulting in variousproblems.

The one-exposure method of the second example which uses the gray-tonemask is capable of providing an approximately continuous exposure amountdistribution, but in general, this gray-tone mask is extremely difficultto fabricate and needs a special substrate material and specialdeposition process techniques. This results in extremely high mask cost.In addition, it has been pointed out that the special film materialtends to suffer variations with time due to heat and has the problem ofperformance stability during use (thermal stability due to exposurelight absorption).

The one-exposure method which uses the mask of the third example doesnot use a special semi-transparent light-blocking film and is made ofso-called ordinary binary patterns, but the light intensity on theexposure surface is set to vary approximately continuously with respectto positions. In the specifications of U.S. Pat. Nos. 3,373,518 and5,310,623, the mask is separated into sub-pixels which are dividedvertically and horizontally with respect to the direction of the opticalaxis, and each sub-pixel is divided into color tone elements which arebased on gray scale resolution, and light intensity is controlled bymeans of the ratio of transmissive ones to non-transmissive ones ofthese color tone elements.

Therefore, in the specifications of U.S. Pat. Nos. 3,373,518 and5,310,623, since the above-mentioned color tone element is 0.2 μm on aside, the sub-pixel which is the unit of light intensity modulation is 2μm long on a side. This leads to the problem that a sufficient number ofintensity modulations cannot be obtained with respect to the unit lenssize (˜10 μm) of a microlens array of, for example, a liquid crystalprojector, and it is impossible to deal with the formation ofmicrolenses which are becoming smaller and smaller.

It is appropriate to apply a reduction projection exposure method inorder to form far finer three-dimensional structures. In this case,however, instead of design which takes into account only the openingarea in each sub-pixel, the sub-pixel size (sub-pixel pitch) must be setto not greater than a pitch defined optically, so that an image of theopening pattern in the sub-pixel is not formed. The specifications ofU.S. Pat. Nos. 3,373,518 and 5,310,623 mainly assume proximity exposureas a premise, and do not make specific reference to any projectionexposure method.

In the specification of U.S. Pat. No. 6,335,151, the numerical analysisof reduction projection exposure lithography is shown, and the openingcenters of individual sub-pixels are concentrically arranged. For thisreason, pitches in the X direction, the Y direction and obliquedirections irregularly vary below a resolution limit and ripple-likelight intensity occurs at locations where different pitches appear, sothat the surface of a formed three-dimensional shape becomes rugged andgreatly affects the performance of optical lenses. In addition, in thisconcentric arrangement, if pattern arrangement is performed so that asquare lens array which optically uses its four corners as well can beformed, patterns are extremely difficult to arrange at the four corners.

Furthermore, in these specifications of U.S. Patent Nos. 3,373,518,5,310,623 and 6,335,151, as to pattern writing using EB (electron beam)in the fabrication of a mask for color tone element unit patterns in thesub-pixels, pattern design based on spot beam scanning (vector scanningor raster scanning) is performed, resulting in design digitized in theunits of color tone elements. Accordingly, the openings in thesub-pixels become polygonal and in an actually fabricated mask,diffraction and scattering phenomena at mask pattern edges cannot beignored. This leads to the problem that the mask transmittance cannot berepresented by a simple pattern density and the desired masktransmittance cannot be achieved.

In addition, in the specification of U.S. Pat. No. 6,335,151, a resistis exposed and developed in advance by the use of a mask having nopatterns, and pattern design based on the correlation between exposureamount and photoresist film thickness after development is performed.However, exposure with an actual gray-tone mask and exposure withoutpatterns differ in flare light intensity occurring on the exposuresurface. Accordingly, if the mask designed in the procedures of thespecification of U.S. Pat. No. 6,335,151 is employed, exposure with themask receives the influence of fog exposure due to unexpected flare.This results in the problem that the controllability of resist height isinferior at a location where mask transmittance is low.

DISCLOSURE OF THE INVENTION

The present invention has been made to solve the above-mentionedproblems. Namely, according to the present invention, in an exposuremask for use in an exposure apparatus, a plurality of pattern blocksmade of a pair of a light blocking pattern which blocks light emittedfrom the exposure apparatus and a transmissive pattern which transmitsthis light are continuously arranged, and the pitch of the continuouspattern blocks is constant in each of X and Y directions and the ratioof the light blocking pattern to the transmissive pattern does not takeson digitized (discrete) values but varies continuously gradually.

In addition, the light blocking pattern or the transmissive pattern ispolygonal, and in order to reduce diffraction and scattering effects atpattern edges difficult to predict theoretically, the light blockingpattern and the transmissive pattern in each diffraction pattern blockare simple squares or rectangles. Accordingly, a variable rectangularbeam writing method which is currently the mainstream in semiconductorlithography can be applied to EB writing in a mask fabrication process.2 nm is obtained on the mask as the minimum grid of a variablerectangular beam type of cutting-edge EB writer, and approximatelycontinuous values are obtained as the converted size of theabove-mentioned opening pattern on the wafer surface.

In addition, a fabrication method for an exposure mask in which aplurality of pattern blocks made of a pair of a light blocking patternwhich blocks light emitted from an exposure apparatus and a transmissivepattern which transmits this light are continuously arranged so that athree-dimensional shape is formed by irradiating a predetermined amountof light onto a photosensitive material, includes a step of calculatingan exposure amount distribution on the photosensitive material fromdesign data on the three-dimensional shape, a step of calculating atransmittance distribution of the exposure mask based on the exposureamount distribution, inclusive of a main error cause such as flareintensity on an exposure surface, a step of calculating the pitch ofcontinuous pattern blocks from optical conditions of the exposureapparatus, and a step of calculating the ratio of the light blockingpattern to the transmissive pattern within the pitch of the patternblocks according to a transmittance distribution and arranging aplurality of pattern blocks having the respective ratios.

In the present invention having this construction, the pattern of theexposure mask is a simple binary pattern made of a light blockingpattern and a transmissive pattern. Accordingly, since it is notnecessary to use a special light blocking film material, the fabricationcost of the exposure mask can be reduced and long-term performancestability can be ensured. A plurality of pattern blocks each made ofthese light blocking pattern and transmissive pattern are continuously.arranged at a constant pitch, and the ratio of the light blockingpattern to the transmissive pattern is set be gradually varied, wherebythe 0th order light intensity is modulated and a sufficient number ofgray scales can be obtained even with one exposure.

Accordingly, the present invention has the following advantages. Namely,it is possible to easily fabricate masks from binary patterns each madeof a transmissive pattern and a light blocking pattern, and it is alsopossible to obtain a sufficient number of gray scales by means of onemask. Accordingly, it is possible to greatly reduce costs to be spentfor masks when a three-dimensional shape is to be obtained by exposure,and it is possible to easily obtain a three-dimensional shape of highaccuracy.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an explanatory schematic view of the principle of a maskaccording to the mode ;

FIGS. 2A and 2B are explanatory views of calculated examples of 0thorder light intensity with respect to the size ratios of patterns;

FIG. 3 is a view showing a contrast curve of a photoresist;

FIG. 4 is a flowchart describing a fabrication method for a mask;

FIG. 5 is a view showing an example of a mask constructed byone-dimensional line-and-space patterning;

FIG. 6 is an explanatory view of the correlation between pattern andtransmittance;

FIG. 7 is a view showing a target three-dimensional shape;

FIG. 8 is a view showing relative intensities obtained when hole sizesare changed;

FIG. 9 is a view showing a mask for forming a concave spherical lensarray;

FIG. 10 is a view showing a portion corresponding to one lens element;

FIG. 11 is a view showing a mask for forming quadrangular pyramidshapes;

FIG. 12 is a view showing a mask for forming a concave cylindrical lensarray;

FIGS. 13A to 13E are explanatory views of another embodiment;

FIG. 14A are explanatory views of a target shape of another embodiment;

FIG. 15 is an explanatory view of a remaining resist filmcharacteristic;

FIG. 16 is an explanatory view of a resist film thickness lossdistribution after development with respect to image height;

FIG. 17 is an explanatory view of the transmittance and space size of amask Mx;

FIG. 18 is an explanatory schematic view of the influence of flare;

FIG. 19 is an explanatory view of resist heights (shape errors) due toflare;

FIG. 20 is an explanatory schematic view of a fabrication method for anexposure mask;

FIG. 21 is a flowchart illustrating an actual example of pattern design;

FIGS. 22A and 22B are views showing specific calculated results;

FIGS. 23A and 23B are explanatory schematic views of an isolated lens;

FIG. 24A and 24B are explanatory schematic views of a lens array inwhich a space lies between lens elements;

FIG. 25 is an explanatory schematic view of patterns corresponding tothe outermost lens periphery;

FIG. 26 is an explanatory view of an exposure result of pattern designwhich takes background tones into account;

FIGS. 27A to 27C are explanatory schematic views of a fabricationprocess for a microlens array;

FIG. 28 is an explanatory schematic view of an apparatus to which amicrolens array is applied;

FIG. 29 is an explanatory schematic view of an example of multipleexposure; and

FIG. 30 is an explanatory conceptual diagram of a gray-tone mask.

BEST MODE FOR CARRYING OUT THE INVENTION

A mode of the present invention will be described below with referenceto the accompanying drawings. First, the principle of an exposure mask(hereinafter referred to simply as “mask”) according to the present modewill be described with reference to the schematic view of FIG. 1.Namely, an exposure apparatus S for use in transfer is constructed sothat the pattern surface of a mask M and a surface of a wafer W areplaced in a conjugate (image-forming) relationship, and normally formsan image of a pattern on the bottom surface of the mask M on the surfaceof the wafer W, thereby effecting transfer of the pattern.

However, when an exposure wavelength (λ), a constructed mask patternpitch (P), a numerical aperture (NA) of the exposure apparatus, and acoherence factor (σ) indicative of the size of a secondary light sourceare given, a minimum pitch (Pmin) which allows an image to be formed onthe surface of the wafer W is expressed by the following equation 1:$\begin{matrix}{{P\quad\min} = \frac{\lambda}{{NA} \times \left( {1 + \sigma} \right)}} & \left( {{Equation}\quad 1} \right)\end{matrix}$

This Equation 1 is interpreted at the level of whether the lowest order(±1) diffracted light should or should not be blocked by the NAdiaphragm of a projection lens, and for example, if λ=365 nm, NA=0.5 andσ=0.5, Pmin=487 nm. Table 1 shows calculated examples of Pmin relativeto individual values of NA and σ for λ=365 nm. TABLE 1 λ = 365 nm, Units[nm], On Wafer NA/σ 0.2 0.3 0.4 0.5 0.6 0.7 0.2 1520.8 1403.8 1303.61216.7 1140.6 1073.5 0.25 1216.7 1123.1 1042.9 973.3 912.5 858.8 0.31013.9 935.9 869.0 811.1 760.4 715.7 0.35 869.0 802.2 744.9 695.2 651.8613.4 0.4 760.4 701.9 651.8 608.3 570.3 536.8 0.45 675.9 623.9 579.4540.7 506.9 477.1 0.5 608.3 561.5 521.4 486.7 456.3 429.4

Namely, fine pitch patterns not greater than Pmin do not allowdiffracted light to reach the surface of the wafer W, so thatinterference of diffracted light, i.e., image formation of maskpatterns, does not at all occur. However, the 0th order light reachesthe wafer W. For the same pitch, the intensity of the 0th order lightbecomes smaller with respect to an increase in light blocking bandwidth, whereas if light blocking parts have the same size, the intensityof the 0th order light becomes larger with respect to an increase inpitch within the range of pitches not greater than Pmin.

Specifically, letting R (<1) be the area ratio of transmissive portionsin a unit repeated pattern, light intensity which reaches the wafersurface is R². For example, the 0th order light in a 1:1 line-and-spacepattern is 0.25. Similarly, the 0th order light in a 1:1 two-dimensionalsquare hole array is 0.0625.

The mask M according to the present mode is characterized in that a maskpattern is designed by the use of this principle. Namely, a plurality ofpattern blocks are constructed at a pitch not greater than the valuecalculated from Equation 1, and the size ratio of a light blockingpattern (light blocking band) to a transmissive pattern in each of thepattern blocks is varied within the range of the pitch, whereby it ispossible to obtain the desired 0th order light. FIGS. 2A and 2B showcalculated examples for the case of a one-dimensional pattern. The pitch(P) of each pattern block PB is 400 nm and Equation 1 is satisfied fromthe optical conditions of the exposure apparatus shown in FIG. 2A,whereby image formation does not occur. From the above description, atransmittance absolute value (Tabs) relative to a one-dimensionalpattern of pitch P and light blocking band width=line width (W) isexpressed by the following equation: $\begin{matrix}{{T_{abs}(W)} = \left( \frac{P - W}{P} \right)^{2}} & \left( {{Equation}\quad 2} \right)\end{matrix}$

Accordingly, it is possible to obtain an arbitrary light intensity byvarying the width of a light blocking pattern PB1 of one pattern blockPB (a pair of the light blocking pattern PB1 and a transmissive patternPB2) at a pitch (400 nm in the example of FIG. 2A) not greater than thepattern pitch expressed by Equation 1. Therefore, as shown in FIG. 2B,it is possible to control the desired intensity distribution byarranging patterns (pitches (Pitch), the widths of the light blockingpatterns PB1) which respectively provide predetermined light intensitiesat predetermined positions. As mentioned above, the values of thepattern sizes PB1 are not discrete values but a continuous variable.

Incidentally, the final objective is to transfer a three-dimensionalshape such as a lens to a substrate of glass or the like, and its finalshape accuracy greatly depends on a photoresist shape which is anintermediate product. The three-dimensional shape is transferred to thesubstrate by drying etching using as a mask the three-dimensional shapeof a photoresist obtained after exposure and development. Accordingly,it is important to highly accurately form this photoresist shape. Therelationship between the remaining film characteristic of thephotoresist and exposure amounts will be described in brief. FIG. 3 is agraph showing a contrast curve which is generally plotted in order tomeasure the sensitivity and contrast of a photoresist.

The horizontal axis represents the logarithms of exposure amounts givento the photoresist, while the vertical axis represents film thicknessesafter developments which are measured by a film thickness gauge. In FIG.3, an exposure amount with which a film thickness loss begins is definedas E0, and an exposure amount with which the film thickness reaches zerois defined as Eth.

In general, however, near E0 and Eth, the linearity of the remainingfilm amount with respect to the exposure amounts (the logarithmic scale)is inferior, so that the remaining film amount is difficult to controlwith the exposure amounts with high accuracy. For this reason, in thepresent mode, as shown in FIG. 3, a linear region of from E1 to E2(E0<E1 to E2<Eth) is selected, and only the exposure amounts in thislinear region are used.

Namely, the film thickness of a photoresist to be used becomescorrespondingly sufficient with respect to the desired processing depthamount. For example, the film thickness of the photoresist may be set sothat its initial resist film thickness=desired processing depth×1.1.

From FIG. 3, for example, the exposure amount necessary for obtaining aremaining film thickness Z is found as Ez. Accordingly, from a shapedistribution at a height at the desired position, the exposure amountdistribution necessary for obtaining this shape is found.

Here, E2=Emax, and the transmittance of a mask is calculated on thebasis of this exposure amount. Incidentally, in the followingdescription, it is assumed that a shape to be formed is aone-dimensional lens array Z=f(X). Namely, letting f(X) be a targetshape of a photoresist=a remaining film distribution, an exposure amountdistribution D(X) for obtaining this remaining film distribution f(X) isobtained from the contrast curve of the photoresist to be used. ThisD(X) is standardized so that the maximum value of D(X) becomes E2,whereby D(X) is converted to a target relative transmittancedistribution T(X) of the mask.

A mask pattern from which this standardized T(X) can be obtained isconstructed by using a pattern pitch and the light blocking patternwidth of each mask block which satisfy Equation 1.

A specific fabrication method for the mask will be described below withreference to the flowchart of FIG. 4.

Step 1: The desired three-dimensional shape Z=f(X) to be formed by maskexposure is defined. In this step, the three-dimensional shape Z=f(X) isdefined on the basis of design data prepared in advance, and the size ofone element (for example, one lens of a lens array) is set to 2L (−L andL).

Step 2: A resist shape Z=f′(X) which can become the desired shape afteretching is defined from etching data which has been separately acquiredin advance (the difference between a resist shape and a shape afteretching=a conversion difference). The etching conversion difference isnot a constant amount but an amount which varies depending on the heightof a resist. Accordingly, the data is acquired in advance and a table offunction approximation or conversion difference is created to definef′(X). Namely, letting f_(et)( ) be a function expressing the conversiondifference, the shape after etching is Z=f_(et)(f′(X)), and the resistshape must be made a shape expressed by the following equation so thatthis Z=f_(et)(f′(X)) becomes the desired shape Z=f(X). In the followingequation, f_(et) ⁻¹ ( ) represents the inverse function of f_(et)( ).f′(x)=f _(et) ⁻¹(f(x))  (Equation 3)

Step 3: A resist remaining film characteristic like that shown in FIG. 3is acquired, and the exposure amount distribution D(X) necessary forobtaining the shape Z=f′(X) at the stage of resist is obtained.

Step 4: D(X) is standardized with the maximum exposure amount E2 and isconverted to the target relative transmittance distribution T(X).

Step 5: The pitch P which is expressed by Equation 1 and permits asufficient number of gray scales to be obtained with respect to theelement size 2L is selected from pitches not greater than the patternpitch. Letting N be the number of gray scales on one side, the pitch Pis selected so that P=L/N. Accordingly, since one element is formed byan integral number of pattern blocks, inconsistency does not occur inthe transmittance of any of element boundaries, and the light amount canbe continuously modulated.

Step 6: Light blocking pattern widths (line widths) are respectivelyvaried between Wmin and P-Smin at the pitch P derived previously,whereby the 0th order light intensity is calculated for each of the linewidths as shown in FIGS. 2A and 2B. For the convenience of calculation,the light blocking patterns are defined to be infinitely repeated at thepitch P. Furthermore, after this, the whole is standardized with the 0thorder light intensity (I₀) for a reference line width. In this case, thelight intensity (I₀) for a minimum line width of 100 nm is set toI₀=0.5625, and the light intensity for each of the line widths isdivided by 0.5625 (Equation 2 is divided by I₀).

Incidentally, Wmin represents the lower fabrication limit of the sizesof lines (not removed) which are the light blocking patterns of themask, while Smin represents the lower fabrication limit of the sizes ofspaces (removed) which are the transmissive patterns of the mask.Incidentally, L, P, Wmin and Smin are size notations relative to thewafer surface which are converted in terms of the projectionmagnification of an exposure apparatus to be used, and Wmin and Smin areset in advance so as not to become lower than the lower limit of maskfabrication size during the design of the mask pattern.

Step 7: Line widths W(X) at X coordinates in a target three-dimensionalshape are obtained from the following equation in which the normalized0th order light intensity obtained in Step 6 and the target relativetransmittance distribution T(X) obtained in Step 4 are made equal toeach other. In the following equation, X=iP (discrete values), i=0, ±1,. . . , ±N.W(X)=P(1−{square root}{square root over (I ₀ ×T(x))}  (Equation 4)

The mask designed and fabricated from these steps is subjected toexposure and transfer, and after development, the desired remaining filmdistribution Z=f′(X) can be obtained, and after etching, the finaldesired three-dimensional shape Z=f(X) can be obtained.

FIG. 5 is a view showing an example of a mask constructed byone-dimensional line-and-space patterning. In this example, the pitch Pof the continuous pattern blocks PB is set to 1/an integer of theelement size 2L, and the variation of the ratio of the line (the lightblocking pattern PB1) to the space (the transmissive pattern PB2)isinverted at an interval of L. Accordingly, a three-dimensional shapemade of continuous convex and concave shapes can be formed by maskexposure.

Although the above description has referred to one-dimensionalarrangement of the pattern blocks PB, this arrangement may also beexpanded into a two-dimensional one. In this case, the above-mentionedZ=f(X) may be defined with Z=f(X, Y). The two-dimensional maskconstruction pattern is formed by a contact hole pattern or an islandpattern which is used for general photomasks for fabrication ofsemiconductor devices, liquid crystal devices and the like.

In Step 6 (refer to FIG. 4) of the one-dimensional mask fabricationmethod, when the light blocking pattern widths (or the transmissivepattern widths) are to be varied, it is possible to use either aconstruction using square patterns made of squares of X=Y each having avaried length on a side or a construction using rectangular patternsrespectively having light blocking pattern widths (or transmissivepattern widths) which are varied in size in matrix form in the XYdirections. Namely, in the latter case, the correlation between patternand transmittance, such as that shown in FIG. 6, is derived. The derivedcorrelation and the desired three-dimensional transmittance distributionT(X, Y) are used to derive the desired mask pattern arrangement.

Embodiments

An embodiment of the present invention in which a target shape is aone-dimensional spherical array (cylindrical lens array) will bedescribed below with reference to the flowchart shown in FIG. 4mentioned previously.

A one-dimensional spherical array (cylindrical lens array) is set as atarget shape. It is assumed that the size of a unit element whichconstitutes this one-dimensional spherical array is 2L (L=10 um) on eachside and the processing depth is L. Namely, f(X)={square root}{squareroot over (L²−X²))} (this processing corresponds to Step 1 of FIG. 4).This target shape is shown in FIG. 7.

An etching rate for a resist/substrate to be used is separately found.For the sake of simplicity of description, the etching rate is assumedto be 1:1. Namely, it is assumed that the resist shape, after etching,is processed without modification (this processing corresponds to Step 2of FIG. 4).

First, the resist to be used is coated to a depth not less than apredetermined processing depth, and data on film thicknesses relative toexposure amounts (dose) are obtained. From the data, on the basis ofdata on film thicknesses relative to ln(dose), a range of E1-E2 havingthe desired linearity is determined. As a linear approximation withinthis range, Z=A+B×ln(E){E1<E<E2} is obtained (this processingcorresponds to Step 3 of FIG. 4).

Since the etching conversion difference of this material can be ignored,the target height f(X) at an X coordinate may be assumed to be f(X)=aresist height after development. Therefore, an exposure amount forobtaining the height f(X) at the X coordinate is expressed by thefollowing equation 5: $\begin{matrix}{{D(x)} = {\exp\left( \frac{{f(x)} - A}{B} \right)}} & \left( {{Equation}\quad 5} \right)\end{matrix}$

Further, this Equation 5 is normalised with the maximum value E2 of theexposure amount, and a target relative transmittance distribution at theX coordinate is obtained as expressed by the following equation 6 (thisprocessing corresponds to Step 4 of FIG. 4): $\begin{matrix}{{T(x)} = {\frac{1}{E2} \times {D(x)}}} & \left( {{Equation}\quad 6} \right)\end{matrix}$

As to an exposure apparatus to be used, λ, NA, σ and magnification aredefined. In this embodiment, it is assumed that an exposure apparatus ofλ=365 nm, NA=0.5, σ=0.5, and reduction magnification=⅕ is used. Inaddition, it is assumed that the background of a mask is 100%transmissive, and the transmittance of each line pattern is 0% (light iscompletely blocked). In this case, the resolution limit pitch expressedby Equation 1 is calculated as P=487 nm (on the wafer). The number ofgray scales is preferably made as large as possible, but in thisembodiment, 25 gray scales are used on one side for ease of maskfabrication. Namely, a converted pitch on the wafer surface is 10um/25=400 nm. Therefore, this pitch pattern is not resolved. The elementcenter is defined as site 0, and defines as ±1, ±2, . . . , ±25 (thisprocessing corresponds to Step 5 of FIG. 4).

Then, the 0th order light intensities obtainable when the light blockpattern width is varied at a pitch of 400 nm are calculated (refer toFIGS. 2A and 2B). In this processing, light blocking band widths whichenable target relative transmittances to be obtained at the respectivesites are found from the transmittance distribution (Equation 6) foundin Step 4 shown in FIG. 4. Namely, as to site m, its central Xcoordinate is mP, and the target relative transmittance at thiscoordinate is found as T(mP)=1/E2×D(mP) from Equation 6. The lightblocking band width W at X=mP is found so that this T(mP) coincides witha value obtained by dividing a light intensity for the pitch P and thelight blocking band width W, which are found from Equation2, by thelight intensity of a reference pattern (in this case, the boundarybetween each lens element). Thus, the light blocking pattern width ineach of the sites is obtained from Equation 4 (this processingcorresponds to Steps S6 and S7 of FIG. 4).

A specific example will be described below in brief as to the case wherea target shape is a two-dimensional array. The target shape is assumedto be a spherical lens array having a radius L and element XY sizes2L×2L. One-dimensional processing of Steps S1 to S5 mentioned above is acommon process.

In the case of a two-dimensional construction, its constituent patternsare not line-and-space patterns but a contact hole array or an islandarray. In the two-dimensional construction as well, its resolution limitpitch is the same as that in the one-dimensional construction, and itsconstruction pitch is a pitch not greater than Pmin expressed byEquation 1.

In this embodiment, an objective is to obtain an arbitrarythree-dimensional intensity distribution over a light blocking blank of0% background transmittance by means of a contact hole array of 100%transmittance. As to the constituent patterns, as shown in FIG. 6, theXY sizes of their holes are varied in matrix form to obtain variouskinds of transmittance data. The hole patterns of this construction areassumed to be defined as two-dimensional infinite repetition of holes ofthe same hole size, and the transmittance data are calculated on thisassumption. FIG. 8 shows examples of calculated relative intensities ofcontact holes some of which have different hole sizes varied with X=Y atfixed XY pitches (400 nm), while the other of which have different holeY sizes with their hole sizes X=Smax (=300 nm) fixed. It is can be seenthat even the patterns of fixed X can obtain about ten times themodulation range of light intensity.

Target transmittances at sites m and n are T(mP, nP) similarly to theabove discussion regarding one dimension, and patterns (XY hole sizes)which obtain these target transmittances are arranged in the respectivesites through steps to which Steps 6 and 7 of FIG. 4 aretwo-dimensionally expanded.

In this embodiment, reference has been made to a one-dimensionalcylindrical lens array and a two-dimensional spherical array, but atarget three-dimensional shape f(X, Y) may be arbitrary and it ispossible to design masks for forming, from photoresists, arbitrarythree-dimensional shapes such as aspherical arrays or quadrangularpyramid shapes (pyramids).

The results of calculations performed on specific mask examples by meansof a resist simulator will be described below. FIG. 9 is a view showinga mask for forming a concave spherical lens array by the use of apositive resist, and FIG. 10 is a view showing a portion correspondingto one lens element of the mask shown in FIG. 9. In FIGS. 9 and 10,dot-dashed lines represent the boundaries between elements whichcorrespond to individual lenses. In the concave spherical lens array,one pattern block is constructed as a through-hole type which is made ofa light blocking pattern and a transmissive pattern. Pattern blocks aretwo-dimensionally arranged so that the ratio of the light blockingpattern to the transmissive pattern is gradually varied.

At the boundary between each of the elements, pattern blocks arrangedalong the boundary are disposed so that their transmissive patterns (ortheir light blocking patterns) overlap one another between adjacent onesof the elements. Accordingly, it is possible to eliminate unnecessaryseams from the boundaries between lenses formed by the respectiveelements. It is to be noted that if the transmittance distribution ofthis mask is inverted, i.e., the hole size of the center of the lens ismade smallest and the other hole sizes are made larger toward theperiphery of the lens, a convex spherical lens array can be formed.Otherwise, if the background is made 100% transmissive and an islandarray pattern is adopted, a mask which can form a convex spherical lensarray is obtained.

FIG. 11 is a view showing a mask for forming quadrangular pyramid shapesby the use of a positive resist. In FIG. 11, there is shown only a maskportion corresponding to one of the shown four quadrangular pyramidshapes. In this mask, one pattern block is constructed as a square holearray type which is made of a light blocking pattern and a transmissivepattern, and pattern blocks are two-dimensionally arranged so that theratio of the light blocking pattern to the transmissive pattern isvaried according to the desired exposure amount distribution.

FIG. 12 is a view showing a mask for forming a concave cylindrical lensarray by the use of a positive resist. In FIG. 12, there is shown only amask portion corresponding to one of the shown two cylindrical lenses.In this mask, one pattern block is made of a straight-line-shaped lightblocking pattern and a transmissive pattern, and pattern blocks areone-dimensionally arranged so that the ratio of the light blockingpattern to the transmissive pattern is gradually varied.

It is to be noted that if the light blocking pattern and thetransmissive pattern of each of the pattern blocks of this mask areinverted, a mask which can form convex cylindrical lens array isobtained.

Another embodiment of the present invention will be described below.FIGS. 13A to 13E are explanatory schematic views of another embodiment.This embodiment is characterized in that in order to form onethree-dimensional structure on a wafer coated with a photoresist, theexposure amount necessary for forming the shape of the three-dimensionalstructure is obtained by addition of two exposures.

Namely, when exposure for forming the desired shape is to be performed,masks Mx and My each formed of lines extending in a direction orthogonalto those of the other are used (refer to FIGS. 13A and 13B), and twoexposures using these masks Mx and My are superimposed to performaddition of the exposure amounts, thereby forming the objective shape.

For example, when a two-dimensional lens array as shown in FIG. 14B isto be formed, the mask Mx having line and space patterns arranged in onedirection (refer to FIG. 13A) and the mask My having line and spacepatterns arranged in a direction perpendicular to this one direction(refer to FIG. 13B) are employed, and exposures using the masks Mx andMy are performed at the same position on the same wafer in asuperimposed manner, whereby a resist shape for a two-dimensional lensarray as shown in FIGS. 14A and 14C is obtained through development.FIG. 14A shows a unit lens shape, while FIG. 14B shows an array lensshape.

Incidentally, this embodiment is based on the assumption that thebackground of each of the masks is 0% transmissive and space patternsare respectively arranged in sites. In addition, it is assumed that theunit lens shape of a two-dimensional lens array to be formed uses anaspherical function f(r) which is defined by the following equation 7.The following description is given on the assumption that r²=x²+Y² andthe following specific numerical examples are used: c (curvature)=0.004and K (conic constant)=−0.75. $\begin{matrix}{{f(r)} = \frac{{cr}^{2}}{1 + \sqrt{1 - {\left( {1 + k} \right)c^{2}r^{2}}}}} & \left( {{Equation}\quad 7} \right)\end{matrix}$

A specific design technique for the masks Mx and My of this embodimentshown in FIGS. 13A and 13B will be described below. A basic mask designtechnique is similar to that of the prior application, and it is assumedthat the remaining film characteristic of the photoresist as shown inFIG. 15 (Z=A+B*ln(E): in this embodiment, A=24.8, B=−4.674, and itsinitial film thickness is 5 μm) and the target aspherical lens shape ofthe unit lens element as shown in FIG. 14A are predefined. In theembodiment to be described below, it is assumed that the etchingselectivity is 1:1 and the shape of the photoresist after development isequal to a substrate shape after etching.

A resist film thickness loss distribution after development with respectto image height is shown in FIG. 16(a). In general, photoresists areinferior in the linearity of their remaining film thicknesses relativeto exposure amounts in the vicinity of exposure amounts for which theirfilm thicknesses become completely zero. Accordingly, these regionsshould not be used for structure formation. For this reason, the lenscenter is designed so that its remaining film becomes not zero (theamount of film thickness loss is not 5 μm) but 0.5 μm thick.

First, on the basis of the resist remaining film characteristic of FIG.15 and the target design shape of FIG. 14A (aspherical equation), across-sectional shape for Y=0 is found from Z=f_(y=0)(X), and anexposure amount distribution E(X) for obtaining this shape afterdevelopment is obtained from the following equation. This E(X) is shownin FIG. 16(b).E(X)=exp[(f(X)−A)/B)

Furthermore, letting E_(C) be an exposure amount to be given at the lenscenter in E(X), an exposure amount distribution E_(Mx)(X) to be given bythe mask Mx is as follows:E _(MX)(X)=exp[(f(X)−A)/B]−E _(C)/2

Then, the maximum value of E_(Mx)(X) is set to E₀, and a relativetransmittance distribution T_(L)(X) is obtained by dividing E(X) by thisE₀.

From a line pattern fabrication lower limit value (L_(min)) of the maskand a mask pattern pitch (P) which satisfies Equation (1), a maximumtransmittance (T_(max)) of the mask becomes:T _(max)=[(P−L _(min))/P] ²In this embodiment, L_(min)=160 nm (in this embodiment, 400 nm on themask on the assumption that a 1.25× reduction projection exposureapparatus is used), and T_(max) is 0.706. From these values, a masktransmittance absolute value (T_(abs)(X)) becomes:T _(abs)(X)=T _(max) ×T _(L)(X)This T_(abs)(X) is shown in FIG. 17(a).

The space size of a mask pattern for obtaining this transmittance isobtained from the following equation:S(X)=P×[T _(abs)(X)]^(1/2)

This S(X) is shown in FIG. 17(b). In this equation, X is the centralcoordinate values of a space pattern, and takes on discrete values ofX=mP (m is zero or a positive/negative integer).

Although the designing method for the mask Mx has been described above,the mask My is obtained by rotating the pattern of the mask Mx by 90°.

The masks Mx and My for forming the two-dimensional lens array can bedesigned through the above-mentioned procedures. An exposure amount(E_(set)) for exposing each of the masks Mx and My becomes:E _(set) =E ₀ /T _(max)

Incidentally, in the two-dimensional lens array formed by this multipleexposure method using two masks, the four corners of each unit lens aredegraded in shape accuracy because of its mask pattern design. The rangein which formed shapes can be actually obtained with good accuracy isX²+Y²<10² as shown in FIG. 14A (20 μm is the length of one side of eachunit lens), and when a lens array formed by the present method is to beactually incorporated into a predetermined optical system, the lensarray is desirably used in combination with a circular opening array forblocking light at four corners as shown in FIG. 14C, as the occasiondemands.

FIG. 13E shows the simulation result of a resist shape obtainable whenthe mask Mx having the transmittance and the space width shown in FIG.17(b) and the mask My orthogonal to this mask Mx are subjected to twoexposures followed by development. FIGS. 13C and 13D show the simulationresults of formed shapes obtainable when the respective masks Mx and Myare exposed, and in practice, after two exposures with the masks Mx andMy have been performed, the lens shape shown in FIG. 13E can beobtained. It can be seen that a resist shape of good accuracy can besimilarly obtained by the use of two exposures.

According to the present embodiment, it is possible to form atwo-dimensional lens array shape by exposing a mask having a simpleline-and-space pattern. Structures such as concave-convex lenses,aspherical lenses and prisms can also be formed by designing theirpatterns through the above-mentioned procedures. In addition, thepresent embodiment can also be applied to design and fabrication of anytwo-dimensional shape forming masks other than the above-mentioned masksfor fabricating microlens arrays.

Furthermore, in the present embodiment, the masks Mx and My are shown asseparate masks, but the mask patterns Mx and My may be arranged on thesame substrate so that the exposure of the present embodiment can beapplied only by modifying an exposure area without exchange of masks.Accordingly, it is possible to realize a reduction in total exposureprocessing time and a decrease in superimposition error.

Yet another embodiment of the present invention will be described below.This embodiment provides a fabricating method for an exposure mask whichtakes into account the flare amount of the optical system of an exposureapparatus. When an exposure mask according to any of the above-mentionedembodiments is actually fabricated by way of experiment and aphotoresist is formed into a predetermined three-dimensional structure(such as a lens array), there is a case where an error occurs in theformation height of a peripheral portion of a lens as shown in the graphof FIG. 18(c) by way of example.

The error has a tendency to become large in formation height at alocation where the mask pattern opening size is small, i.e., the masktransmittance is small. A main possible cause is that when a largeexposure amount is given by the exposure apparatus, an unexpected “fogexposure” occurs under the influence of flare in the exposure apparatus,so that DC component-like exposure amounts occur over the entireexposure field.

The impact of this flare on surface accuracy in the formation of a lensarray will be described with reference to the conceptual diagram of FIG.18. In the case where, for example, a one-dimensional concave lens arrayshape is formed from a positive resistive, as shown in FIG. 18(a), thelight intensity is largest at the lens center, and the light intensitybecomes smaller from the lens center toward the periphery (boundary).Accordingly, the transmittance of the exposure mask, i.e., the patternopening ratio thereof, becomes smaller from the lens center toward theperiphery.

If a far larger resist processing depth is to be obtained, the range oftransmittance of the mask needs to be made larger. In the case ofone-dimensional lens formation, the transmittance of the mask may be amaximum of 70% to 80% and a minimum of several %.

On the other hand, the flare in the exposure amount is a phenomenonwhich occurs owing to the surface roughness of the polished surfaces oflenses which constitute the optical system as well as becauseanti-reflection layers coated on the lenses do not have completely zeroreflectances, and lights reflected from various surfaces including themask are subjected to multiple diffuse reflection and reach animage-forming plane as so-called stray light. When flare is present,stray light which can be regarded as a uniform DC component is presenton the wafer surface (refer to FIG. 18(b)). It is said that even anexposure apparatus for use in semiconductor fabrication has 3% to 4%flare.

Namely, the amount of flare is at the same level as the minimum value ofthe above-mentioned mask transmittance, and the influence of unexpectedflare on exposure amounts becomes remarkable in the peripheral portionof the lens. A specific estimation example of this shape error is shownin FIG. 19. The respective data shown in FIG. 19 use resist contrastsand lens design values which will be described later, and are asfollows:

a) target lens shape (0% flare),

b) lens shape relative to 3% flare (calculated value),

c) lens shape error (height error)→right axis.

As shown, the lens is formed to be 1.2 um lower than its design heightat its outermost periphery under the influence of 3% flare. As oneexample, if it is assumed that the target shape of a lens is aone-dimensional concave lens array and the shape is expressed by anaspherical equation and that its radius of curvature (R)=7 um and itslens size is 19.6 um, this indicates that its conic constantapproximately becomes k≅−0.875 with respect to a design value of K=−0.7,so that deviations from the design values of various kinds of opticalperformance of the lens become unignorable.

This embodiment is characterized by taking into account the influence offlare in the pattern design of exposure masks. FIG. 20 is an explanatoryschematic view of a fabrication method for an exposure mask according tothe present embodiment. It is assumed that the amount of flare is knownby being quantitatively measured by a method which will be describedlater in the embodiment (refer to International PublicationWO2002-009163 (Japanese Patent Application No. 2002-514774), SPIEVOL.3051 (1997) P708-P713, Measuring Flare and Its effect on ProcessLatitude).

In addition, in the pattern design of the mask, it is assumed that aneffective exposure amount at each position on the mask is the sum oftransmitted light from the mask and flare which is a DC component. Amask transmittance at each position is set so that this effectiveexposure amount can provide the desired lens shape.

In this embodiment, as one example, it is assumed that the target shapeof a lens to be handled is a one-dimensional concave lens array and theshape is expressed by an aspherical equation and that the lens has anaspherical surface of radius of curvature (R)=7 um and conic constant(k)=−0.7 and its lens size. is 19.6 um. In this case, the sag amount ofthe lens is 8.3 um. The aspherical equation is assumed to be expressedby the above-mentioned Equation 7. In Equation 7, r represents thedistance from the lens center, and c represents a curvature which is thereciprocal of a radius of curvature.

The contrast of a resist to be used is measured in advance, and its filmthickness during its initial unexposed state is 10 um. With respect toan exposure amount (E), a resist height (Z) after development isexpressed as Z=20−4×ln(E) (refer to the relationship between exposureamount and remaining film thickness in FIG. 20).

An exposure apparatus to be used has a numerical aperture (NA)=0.25 anda coherence factor (σ)=0.6 (refer to the exposure apparatus parametersshown in FIG. 20). At this time, the maximum value of non-imagingpitches derived from Equation 1 is 912.5 nm. Therefore, in the case ofthis embodiment, the pattern pitch is set to 700 nm which is 1/aninteger of an entire lens size of 19.6 um.

If it is assumed that the reduction projection magnification of theexposure apparatus is 1/2.5 times and the minimum mask size value is 400nm on the mask, the value is 160 nm on the wafer surface. Therefore, amask pattern can be formed in the range of space sizes 160 nm to 540 nmat a pitch of 700 nm.

Under these conditions, the reference of the pattern is determined sothat a maximum transmittance of 0.595 at the lens center can be obtainedat a hole pitch of 700 nm with a hole size of 540 nm, whereby patterndesign is performed so that the desired lens shape is obtained afterdevelopment.

An actual example of pattern design according to the present embodimentwill be described below with reference to the flowchart of FIG. 21. Inthe present embodiment, as to dry etching after formation of a resistshape, a description will be given on the assumption that the conversiondifference is zero, for the sake of simplicity. Namely, it is assumedthat a resist shape=a lens shape after etching. By way of example, theabove-mentioned processing conditions shown in FIG. 20 are used asprocessing conditions such as target lens shape, resist contrast andparameter of the exposure apparatus.

[Step 11 and Step 12]

First, the flare amount is specified. This is assumed to beapproximately calculated and quantified by the above-mentioned knowntechnique. In these steps, it is assumed that the flare is 3%. Theflowchart proceeds to the following description.

[Step 13]

Then, an exposure amount (Ei) for obtaining a target height (Z) at eachposition (image height) is calculated. In this step, it is assumed thatthe contrast curve of the resist is Z=20−4×ln (E) as previously assumed,and the objective lens shape is a one-dimensional lens having anaspherical surface of radius of curvature (R)=7 um and conic constant(k)=−0.7 as well as a lens size of 19.6 um.

[Step 14]

A mask transmittance for obtaining the exposure amount (Ei) at eachposition is calculated. First, in this step, a 1 um thick resist is leftbecause, as described previously, it is preferable to form a resistshape with a slight film thickness left even at a location where itsfilm thickness becomes smallest. From the previously set contrast curve(Z=20−4×ln(E)) of the resist, an exposure amount which provides aremaining film thickness of 1 um without a pattern is calculated as 116[mJ/cm²]. In this embodiment, the setting of the exposure amount isperformed by setting conditions for an exposure amount which allows theremaining film to become 1 μm thick at the lens center (zero imageheight) (Eset). Since the mask pattern at a position of zero imageheight has a maximum space size of 540 nm, the theoretical value of masktransmittance at this time is 60%. When this 60% and 3% of flare areadded together, an exposure amount which is 63% of the set exposureamount (Eset) is effectively given, and the set exposure amount (Eset)becomes 185 [mJ/cm²] from the following equation:(exposure amount for providing remaining film thickness of 1 um=116[mJ/cm²])/(0.60+0.03)=185 [mJ/cm²].

[Step 15]

Then, a mask transmittance (T_(abs)(X)) for obtaining a target exposureamount (E(X)) at each position is calculated from the followingequation:E set*(T _(abs)(X)+flare)=E(X)

Step 16]

Finally, a space pattern size S(X) for obtaining this mask transmittance(T_(abs)(X)) is calculated from the following equation. In thisequation, X is the central coordinate values of a space pattern, andtakes on discrete values of X=mP (m is zero or a positive/negativeinteger). Specific results of this calculation are shown in FIGS. 22Aand 22B.S(X)=P×[T _(abs)(X)]^(1/2)

FIGS. 22A and 22B show mask pattern solutions relative to 0% flare and3% flare, and FIG. 22A shows a graph, while FIG. 22B shows numericalexamples. From these figures, it is possible to see the differencebetween the mask pattern solutions based on the difference between theamounts of flare.

These amounts of flare are calculated in advance and an exposure amountincluding the flare amounts and light transmitted through the mask isfound as an effective exposure amount, and a mask pattern designingmethod which enables the desired resist shape to be obtained from thiseffective exposure amount can be adopted to eliminate the global errorsof the resist shape.

In the present embodiment, reference has been made to one-dimensionalpattern formation, but even in two-dimensional pattern formation usingthe above-mentioned contact hole patterns or island patterns, similaradvantages can be achieved by adopting similar techniques.

An example of the case where an isolated lens (refer to FIG. 23A) or alens array in which a space lies between lens elements which are notcompletely continuous (refer to FIG. 23B) will be described below.

Namely, the above description has referred to methods of designing maskpatterns for forming lens arrays, but if an isolated lens or a lensarray having lens elements with a space lying therebetween is to beformed, the same pattern as an outermost lens periphery needs to bearranged as the pattern of a lens periphery.

In the case of a mask according to the present invention, lightintensity at one point on a wafer to be exposed, i.e., lighttransmittance, is controlled on the basis of a pattern for at least twopitches, and as shown in FIG. 24A by way of example, in a mask patternarrangement at the outermost lens periphery, if a pitch P is ensured onone side but an infinite pitch (isolation) lies on the other side, theother side does not satisfy non-imaging conditions (Equation 1).Therefore, partial image formation occurs, so that ripple noise isproduced in light intensity. Accordingly, the surface accuracy of aresist shape which is an intermediate product is remarkably degraded.

To avoid this, the same pattern as the mask pattern of the outermostlens periphery or edge (the ratio of a light blocking pattern to atransmissive pattern which are formed within a space size S_(N)) isarranged as a background tone forming pattern (a peripheral pattern).One- and two-dimensional examples each including this peripheral patternare shown in FIGS. 24B and 25, respectively. The background tone partsshown in each of FIGS. 24B and 25 correspond to peripheral patterns,respectively. The hatched portions of FIG. 25 conceptually show thelight blocking parts of the. respective peripheral patterns (backgroundtone parts), and are chromium light blocking parts which are 0%transmissive.

According to this pattern arrangement, it is possible to minimize theoccurrence of ripples in light intensity at the outermost lens peripheryor edge. FIG. 26 shows an example of light intensity simulation inpattern design for forming a specific one-dimensional isolated lens, andit can be seen that ripples are suppressed at the outermost lensperiphery by a pattern arrangement which takes into account backgroundtones.

A method of fabricating a microlens array with an exposure maskaccording to the present invention will be described below withreference to the schematic views of FIGS. 27A to 27C. First, a substratemade of, for example, a quartz glass wafer of diameter 6 inches iscoated with a photoresist (hereinafter referred to simply as “resist”)which is a photosensitive material. The coating thickness is, forexample, approximately 10 um (refer to FIG. 27A).

Then, a stepper which is one type of exposure apparatus is made toradiate i-line light to expose the resist via the mask of the presentembodiment. In this step, an alignment mark which is to be necessary ina later step is also formed at the same time. After exposure, the resistis developed, whereby a three-dimensional shape set by the mask can betransferred to the resist (refer to FIG. 27B).

Then, the substrate is dry-etched via this resist. In this manner, thethree-dimensional shape of the resist is transferred to the substrate.After that, the quartz substrate to which the three-dimensional shapehas been transferred is coated with a resin having a high refractiveindex by spin coating or the like. In this manner, a plus power lensarray made of the resin corresponding to the three-dimensional shape ofthe substrate is formed (refer to FIG. 27C).

This microlens array is applied to the apparatus shown in FIG. 28. Theapparatus shown in FIG. 28 is a liquid crystal projector, and includesTFTs (Thin Film Transistors) formed on its quartz substrate and a liquidcrystal formed on the TFTs, and controls the orientation of its liquidcrystal layer in units of pixels by the driving of the TFTs.

In a microlens array ML formed with the mask according to the presentembodiment, individual lenses L are formed of a resin layer tocorrespond to the respective pixels of the liquid crystal projector.According to the mask of the present embodiment, it is possible to formthe microlens array ML through one exposure, and the mask itself can beeasily fabricated because the mask is a binary mask made of acombination of light blocking patterns and transmissive patterns.Accordingly, the microlens array ML to be applied to the liquid crystalprojector can be inexpensively provided, and the cost of the liquidcrystal projector can be reduced.

As mentioned previously, the shape of each of the lenses L to be formedcan be freely set according to the ratio or arrangement of a lightblocking pattern and a transmissive pattern, and an accurate lens shapecan be reproduced by setting a mask exposure amount which makes good useof the development characteristics of the resist. Accordingly, it ispossible to provide the lenses L of high accuracy without producingunnecessary seams at the boundaries between the individual lenses L.

It is to be noted that the above-mentioned microlens array fabricationmethod uses an example in which after a three-dimensional photoresistshape has been formed, a substrate is processed by etching, but it isalso possible to mass-produce microlens arrays by a stamper method usinga more inexpensive resin or the like as a material, by electro forming aphotoresist into a mother mold. In addition, the lens array formed withthe mask of the present embodiment can be applied not only to the liquidcrystal projector but also to CCDs, other liquid crystal apparatus,semiconductor lasers, photosensitive devices and optical communicationequipment. In addition, the present embodiment can also be applied tothe fabrication of three-dimensional shapes other than lenses.

INDUSTRIAL APPLICABILITY

The present invention can be applied to switches, relays and sensorsusing MEMS (Micro Electro Mechanical System) or NEMS (Nano ElectroMechanical System). Further, the present invention can be applied to theformation of the base shapes of substrates into arbitrary shapes insemiconductor fabrication and the like.

1. An exposure mask for use in an exposure apparatus characterized bycomprising: a plurality of pattern blocks configured from a pair of alight blocking pattern for blocking illumination light emitted from saidexposure apparatus and a transmissive pattern for transmitting saidillumination light, said is plurality of pattern blocks beingcontinuously arranged; wherein a pitch of said continuous pattern blocksis constant and a ratio of said light blocking pattern to saidtransmissive pattern is varied gradually.
 2. The exposure mask accordingto claim 1, characterized in that: said pitch of said continuous patternblock has a size such that light reaching an image formation planethrough said pattern block is only 0th order light.
 3. The exposure maskaccording to claim 1, characterized in that a following equation issatisfied:P<λ/{NA×(1+σ)} where said pitch of said continuous pattern block is P(converted on the wafer surface), an exposure wavelength of saidexposure apparatus is λ, a numerical aperture of said exposure apparatusis NA, and a coherence factor (σ) indicative of a size of a secondarylight source.
 4. The exposure mask according to claim 1, characterizedin that: said pattern block is configured such that said light blockingpattern and said transmissive pattern are formed with straight lines,respectively.
 5. The exposure mask according to claim 1, characterizedin that: said pattern block is constructed as a through-hole type or anisland type by said light blocking pattern and said transmissivepattern.
 6. The exposure mask according to claim 1, characterized inthat: said pitch of said continuous pattern block is 1/an integer of asize of an element formed by exposure.
 7. The exposure mask according toclaim 1, characterized in that: said pattern block forms a cylindricallens by exposure through said pattern block.
 8. The exposure maskaccording to claim 1, characterized in that: said pattern block forms aspherical lens or an aspherical lens by exposure through said patternblock.
 9. The exposure mask according to claim 1, characterized in that:said pattern block forms a prism array by exposure through said patternblock.
 10. A design and fabrication method of an exposure mask in whicha plurality of pattern blocks constituted by a pair of a light blockingpattern blocking light emitted from an exposure apparatus and atransmissive pattern transmitting said light are continuously arranged,in order to form a three-dimensional shape by irradiating apredetermined amount light to a photosensitive material, ischaracterized by comprising the steps of: calculating an exposure amountdistribution to said photosensitive material from design data of saidthree-dimensional shape; calculating a transmittance distribution ofsaid exposure mask based on said exposure amount distribution;calculating a pitch of said continuous pattern block from opticalconditions of said exposure apparatus; and arranging a plurality of saidpattern blocks so as to be respective ratios by calculating a ratio ofsaid light blocking pattern to said transmissive pattern within saidpitch of said pattern blocks according to said transmittancedistribution.
 11. The fabrication method of an exposure mask accordingto claim 10, characterized in that: in said step of calculating anexposure amount distribution to said photosensitive material from designdata of said three-dimensional shape, an effective exposure amount towhich a flare amount of an optical system of said exposure apparatus isadded is calculated as said exposure amount distribution.
 12. Thefabrication method of an exposure mask according to claim 11,characterized in that: said flare amount of an optical system of saidexposure apparatus is quantified by performing an overexposure with aknown pattern of light transmittance and obtaining an amount of exposureby which said overexposure removes remaining resist films.
 13. Theexposure mask according to claim 1, characterized in that: a first maskconstituted by said light blocking pattern and said transmissive patternlinearly provided along one direction and a second mask constituted bysaid light blocking pattern and said transmissive pattern linearlyprovided perpendicular to said one direction are provided on a singlebase material.
 14. An exposure method for a photosensitive materialusing an exposure mask in which a plurality of pattern blocks configuredfrom a pair of a light blocking pattern for blocking illumination lightemitted from an exposure apparatus and a transmissive pattern fortransmitting said illumination light, said plurality of pattern blocksbeing continuously arranged; and a pitch of said continuous patternblock is constant and a ratio of said light blocking pattern to saidtransmissive pattern is varied gradually; characterized by comprisingthe steps of: first exposing for said photosensitive material using anexposure mask having a pattern block in which said light blockingpattern and said transmissive pattern linearly provided along onedirection; second exposing for said photosensitive material using anexposure mask having a pattern block in which said light blockingpattern and said transmissive pattern are linearly providedperpendicular to said one direction so as to superpose a portion wheresaid first exposure performed.
 15. The exposure method according toclaim 14, characterized in that: after said first exposure is performed,said exposure mask used in said first exposure is rotated by 90° andsaid second exposure is performed.
 16. The exposure method according toclaim 14, characterized in that: an exposure mask for performing saidfirst exposure and an exposure mask for performing said second exposureare provided on a single base material, after said first exposureperformed, said second exposure is performed by selectively movingexposure position of said base material.
 17. The exposure mask accordingto claim 1, characterized in that: a ratio of said light blockingpattern to said transmissive pattern is continuously varied according totransmittance of illumination light at said pattern block.
 18. Theexposure mask according to claim 5, characterized in that: said patternblock is arranged in rectangular form.
 19. The exposure mask accordingto claim 1, characterized in that: a periphery pattern is provided atperiphery of said continuous pattern block, as said periphery pattern, alight blocking pattern and a transmissive pattern having a same ratio ofa light blocking pattern to transmissive pattern constituting a patternblock at outermost periphery or edge of said continuous pattern block isarranged.
 20. The fabrication method of an exposure mask according toclaim 10, characterized in that: in said step of calculating an exposureamount distribution to said photosensitive material from design data ofsaid three-dimensional shape, said exposure amount distribution takesinto account an etching conversion difference during etching at a laterstep.
 21. The fabrication method of an exposure mask according to claim10, characterized in that: said etching conversion differences areformed from values depending on a height of said photosensitive materialbefore etching and being represented in a function or a table.